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|Title:||Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs||Authors:||Lou, C.L.
|Issue Date:||1997||Citation:||Lou, C.L.,Qin, W.H.,Chim, W.K.,Chan, D.S.H. (1997). Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 127-132. ScholarBank@NUS Repository.||Abstract:||Hot-carrier injection is observed to increasingly degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier stressed submicrometer channel length devices. The generated interface traps and channel length reduction are subsequently extracted. An empirical model is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this model, we can determine the degradation parameters and hence predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81549|
|Appears in Collections:||Staff Publications|
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