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|Title:||Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing||Authors:||Qin, W.H.
|Issue Date:||May-1998||Citation:||Qin, W.H., Chim, W.K., Chan, D.S.H., Lou, C.L. (1998-05). Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing. Semiconductor Science and Technology 13 (5) : 453-459. ScholarBank@NUS Repository.||Abstract:||Hot-carrier injection is observed increasingly to degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier-stressed submicrometre channel length devices. The channel length reduction is subsequently extracted. An empirical relationship is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this relationship, we can determine the device lifetime or predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology. The degradation of the PMOSFET subthreshold current, which imposes a major limit on device reliability for deep-submicron technology and low-power applications, is fully described by a physical analytical model.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/80746||ISSN:||02681242|
|Appears in Collections:||Staff Publications|
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