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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 1-20 of 40 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12002A study of the decomposition of GaN during annealing over a wide range of temperaturesRana, M.A.; Choi, H.W.; Breese, M.B.H. ; Osipowicz, T. ; Chua, S.J. ; Watt, F. 
213-Oct-2003A study of the material loss and other processes involved during annealing of GaN at growth temperaturesRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Chua, S.J. 
32005Analysis of E-field distributions within high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Heiderhoff, R.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
42005Analysis of premature breakdown in high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Pugatschow, A.; Niedernostheide, F.-J.; Schulze, H.-J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. 
518-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
62000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
71-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
81-Aug-2004Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.; Chua, S.J. ; Liu, Y.Y. 
91997Development of the IBIC (Ion Beam Induced Charge) technique for IC failure analysisOsipowicz, T. ; Sanchez, J.L.; FWatt; Kolachina, S.; Ong, V.K.S. ; Chan, D.S.H. ; Phang, J.C.H. 
1015-Feb-2002Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicideTan, W.L.; Pey, K.L. ; Chooi, S.Y.M.; Ye, J.H.; Osipowicz, T. 
11Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
12Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
1315-Mar-2004Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layerChen, C.; Teo, K.L. ; Chong, T.C. ; Wu, Y.H. ; Osipowicz, T. ; Anisur Rahman, Md.
14Mar-1998Fluence dependence of IBIC collection efficiency of CMOS transistorsOsipowicz, T. ; Sanchez, J.L.; Orlic, I. ; Watt, F. ; Kolachina, S.; Chan, D.S.H. ; Phang, J.C.H. 
152005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
161-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
171999Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputteringZhang, K.; Zhu, F. ; Huan, C.H.A. ; Wee, A.T.S. ; Osipowicz, T. 
182-Sep-1999Investigation of light emitting diodes using nuclear microprobesYang, C. ; Bettiol, A.; Jamieson, D.; Hua, X.; Phang, J.C.H. ; Chan, D.S.H. ; Watt, F. ; Osipowicz, T. 
191997Ion Beam Induced Charge imaging for the failure analysis of semiconductor devicesKolachina, S.; Chan, D.S.H. ; Phang, J.C.H. ; Osipowicz, T. ; Sanchez, J.L.; Watt, F. 
2021-Jan-2004Ion beam induced charge microscopy studies of power diodesZmeck, M.; Balk, L.J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.