Formation and thermal stability of nickel germanide on germanium substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.44.L1389

Title:	Formation and thermal stability of nickel germanide on germanium substrate
Authors:	Zhang, Q. Nan, W.U. Osipowicz, T. Bera, L.K. Zhu, C.
Keywords:	Activation energy Nickel germanide Thermal stability
Issue Date:	2005
Citation:	Zhang, Q., Nan, W.U., Osipowicz, T., Bera, L.K., Zhu, C. (2005). Formation and thermal stability of nickel germanide on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 44 (42-45) : L1389-L1391. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.44.L1389
Abstract:	The formation and thermal stability of nickel germanide on germanium substrate were examined by both electrical and physical characterization methods. Low resistivity (14 μΩ cm) mono-nickel-germanide was formed at a low temperature of 400°C on Ge substrate. The sheet resistance of nickel germanide changed with the germanide formation temperatures and had a similar characteristic as nickel suicide. However, the thermal stability study shows that NiGe formed on Ge substrate has a poorer thermal stability than NiSi on Si substrate, which is due to the lower activation energy of agglomeration in NiGe (2.2 ± 0.2 eV) compared to NiSi. ©2005 The Japan Society of Applied Physics.
Source Title:	Japanese Journal of Applied Physics, Part 2: Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/56081
ISSN:	00214922
DOI:	10.1143/JJAP.44.L1389
Appears in Collections:	Staff Publications

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