Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.44.L1389
Title: Formation and thermal stability of nickel germanide on germanium substrate
Authors: Zhang, Q.
Nan, W.U.
Osipowicz, T. 
Bera, L.K.
Zhu, C. 
Keywords: Activation energy
Nickel germanide
Thermal stability
Issue Date: 2005
Citation: Zhang, Q., Nan, W.U., Osipowicz, T., Bera, L.K., Zhu, C. (2005). Formation and thermal stability of nickel germanide on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 44 (42-45) : L1389-L1391. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.44.L1389
Abstract: The formation and thermal stability of nickel germanide on germanium substrate were examined by both electrical and physical characterization methods. Low resistivity (14 μΩ cm) mono-nickel-germanide was formed at a low temperature of 400°C on Ge substrate. The sheet resistance of nickel germanide changed with the germanide formation temperatures and had a similar characteristic as nickel suicide. However, the thermal stability study shows that NiGe formed on Ge substrate has a poorer thermal stability than NiSi on Si substrate, which is due to the lower activation energy of agglomeration in NiGe (2.2 ± 0.2 eV) compared to NiSi. ©2005 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics, Part 2: Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56081
ISSN: 00214922
DOI: 10.1143/JJAP.44.L1389
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