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|Title:||Formation and thermal stability of nickel germanide on germanium substrate|
|Citation:||Zhang, Q., Nan, W.U., Osipowicz, T., Bera, L.K., Zhu, C. (2005). Formation and thermal stability of nickel germanide on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 44 (42-45) : L1389-L1391. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.44.L1389|
|Abstract:||The formation and thermal stability of nickel germanide on germanium substrate were examined by both electrical and physical characterization methods. Low resistivity (14 μΩ cm) mono-nickel-germanide was formed at a low temperature of 400°C on Ge substrate. The sheet resistance of nickel germanide changed with the germanide formation temperatures and had a similar characteristic as nickel suicide. However, the thermal stability study shows that NiGe formed on Ge substrate has a poorer thermal stability than NiSi on Si substrate, which is due to the lower activation energy of agglomeration in NiGe (2.2 ± 0.2 eV) compared to NiSi. ©2005 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics, Part 2: Letters|
|Appears in Collections:||Staff Publications|
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