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|Title:||Analysis of E-field distributions within high-power devices using IBIC microscopy||Authors:||Zmeck, M.
|Issue Date:||2005||Citation:||Zmeck, M.,Balk, L.J.,Heiderhoff, R.,Osipowicz, T.,Watt, F.,Phang, J.C.H.,Khambadkone, A.M.,Niedernostheide, F.-J.,Schulze, H.-J. (2005). Analysis of E-field distributions within high-power devices using IBIC microscopy. Proceedings of the International Symposium on Power Semiconductor Devices and ICs : 235-238. ScholarBank@NUS Repository.||Abstract:||In this paper time resolved Ion Beam Induced Charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data. © 2005 IEEE.||Source Title:||Proceedings of the International Symposium on Power Semiconductor Devices and ICs||URI:||http://scholarbank.nus.edu.sg/handle/10635/51115||ISSN:||10636854|
|Appears in Collections:||Staff Publications|
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