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https://scholarbank.nus.edu.sg/handle/10635/51115
| Title: | Analysis of E-field distributions within high-power devices using IBIC microscopy | Authors: | Zmeck, M. Balk, L.J. Heiderhoff, R. Osipowicz, T. Watt, F. Phang, J.C.H. Khambadkone, A.M. Niedernostheide, F.-J. Schulze, H.-J. |
Issue Date: | 2005 | Citation: | Zmeck, M.,Balk, L.J.,Heiderhoff, R.,Osipowicz, T.,Watt, F.,Phang, J.C.H.,Khambadkone, A.M.,Niedernostheide, F.-J.,Schulze, H.-J. (2005). Analysis of E-field distributions within high-power devices using IBIC microscopy. Proceedings of the International Symposium on Power Semiconductor Devices and ICs : 235-238. ScholarBank@NUS Repository. | Abstract: | In this paper time resolved Ion Beam Induced Charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data. © 2005 IEEE. | Source Title: | Proceedings of the International Symposium on Power Semiconductor Devices and ICs | URI: | http://scholarbank.nus.edu.sg/handle/10635/51115 | ISSN: | 10636854 |
| Appears in Collections: | Staff Publications |
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