Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/51115
Title: Analysis of E-field distributions within high-power devices using IBIC microscopy
Authors: Zmeck, M.
Balk, L.J.
Heiderhoff, R.
Osipowicz, T. 
Watt, F. 
Phang, J.C.H. 
Khambadkone, A.M. 
Niedernostheide, F.-J.
Schulze, H.-J.
Issue Date: 2005
Source: Zmeck, M.,Balk, L.J.,Heiderhoff, R.,Osipowicz, T.,Watt, F.,Phang, J.C.H.,Khambadkone, A.M.,Niedernostheide, F.-J.,Schulze, H.-J. (2005). Analysis of E-field distributions within high-power devices using IBIC microscopy. Proceedings of the International Symposium on Power Semiconductor Devices and ICs : 235-238. ScholarBank@NUS Repository.
Abstract: In this paper time resolved Ion Beam Induced Charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data. © 2005 IEEE.
Source Title: Proceedings of the International Symposium on Power Semiconductor Devices and ICs
URI: http://scholarbank.nus.edu.sg/handle/10635/51115
ISSN: 10636854
Appears in Collections:Staff Publications

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