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https://doi.org/10.1016/j.jcrysgro.2003.12.052
Title: | Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer | Authors: | Chen, C. Teo, K.L. Chong, T.C. Wu, Y.H. Osipowicz, T. Anisur Rahman, Md. |
Keywords: | A1. Reflection high energy electron diffraction A3. Molecular beam epitaxy B1. Sulfides B2. Semiconducting II-VI materials |
Issue Date: | 15-Mar-2004 | Citation: | Chen, C., Teo, K.L., Chong, T.C., Wu, Y.H., Osipowicz, T., Anisur Rahman, Md. (2004-03-15). Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer. Journal of Crystal Growth 264 (1-3) : 58-63. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2003.12.052 | Abstract: | We report the growth and characterization of Zn0.05Sr 0.95S codoped with europium and samarium ions. The material was grown on α-MnS (rocksalt) buffer layer on (001)MgO substrate, using solid-source molecular-beam epitaxy technique. Characterization by reflection high-energy electron diffraction, atomic force microscopy, Rutherford back-scattering spectrometry and X-ray diffraction results provide clear evidence that a good stoichiometric film with crystalline single-phase rocksalt α-Zn0.05Sr0.95S can be obtained at high substrate temperature without sulfur deficiency. Intense infrared-stimulated luminescence (ISL) with a peak at 612nm is observed in α-Zn0.05Sr 0.95S:Eu, Sm which is stimulated with infrared light after irradiation with visible light. The ISL result shows that the α-Zn 0.05Sr0.95S:Eu and Sm can be developed for erasable and rewritable optical memory. © 2004 Elsevier B.V. All rights reserved. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/82297 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2003.12.052 |
Appears in Collections: | Staff Publications |
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