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|Title:||Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering||Authors:||Zhang, K.
|Issue Date:||1999||Citation:||Zhang, K.,Zhu, F.,Huan, C.H.A.,Wee, A.T.S.,Osipowicz, T. (1999). Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering. Surface and Interface Analysis 28 (1) : 271-274. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-1||Abstract:||Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is approximately 0.4. Uniform ZnO:In films with a resistivity of approximately 7×10-4Ω.cm and a high transparency (>85%) were achieved, with further optimization possible.||Source Title:||Surface and Interface Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/96907||ISSN:||01422421||DOI:||10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-1|
|Appears in Collections:||Staff Publications|
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