Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-1
Title: Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering
Authors: Zhang, K.
Zhu, F. 
Huan, C.H.A. 
Wee, A.T.S. 
Osipowicz, T. 
Issue Date: 1999
Citation: Zhang, K.,Zhu, F.,Huan, C.H.A.,Wee, A.T.S.,Osipowicz, T. (1999). Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering. Surface and Interface Analysis 28 (1) : 271-274. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-1
Abstract: Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is approximately 0.4. Uniform ZnO:In films with a resistivity of approximately 7×10-4Ω.cm and a high transparency (>85%) were achieved, with further optimization possible.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/96907
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-1
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