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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING
Type:  Article

Results 1-20 of 25 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
113-Oct-2003A study of the material loss and other processes involved during annealing of GaN at growth temperaturesRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Chua, S.J. 
218-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
31-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
415-Feb-2002Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicideTan, W.L.; Pey, K.L. ; Chooi, S.Y.M.; Ye, J.H.; Osipowicz, T. 
5Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
615-Mar-2004Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layerChen, C.; Teo, K.L. ; Chong, T.C. ; Wu, Y.H. ; Osipowicz, T. ; Anisur Rahman, Md.
7Mar-1998Fluence dependence of IBIC collection efficiency of CMOS transistorsOsipowicz, T. ; Sanchez, J.L.; Orlic, I. ; Watt, F. ; Kolachina, S.; Chan, D.S.H. ; Phang, J.C.H. 
82005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
91-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
101999Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputteringZhang, K.; Zhu, F. ; Huan, C.H.A. ; Wee, A.T.S. ; Osipowicz, T. 
112-Sep-1999Investigation of light emitting diodes using nuclear microprobesYang, C. ; Bettiol, A.; Jamieson, D.; Hua, X.; Phang, J.C.H. ; Chan, D.S.H. ; Watt, F. ; Osipowicz, T. 
12Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
136-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
1418-May-2006Magnetic and transport properties of Ge : MMMn granular systemLi, H.; Wu, Y. ; Liu, T. ; Wang, S.; Guo, Z.; Osipowicz, T. 
15Mar-2000Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicidesLee, P.S.; Mangelinck, D.; Pey, K.L. ; Shen, Z.X. ; Ding, J. ; Osipowicz, T. ; See, A.
16Feb-1996New developments in beam induced current methods for the failure analysis of VLSI circuitsChan, D.S.H. ; Phang, J.C.H. ; Lau, W.S. ; Ong, V.K.S. ; Sane, V. ; Kolachina, S.; Osipowicz, T. ; Watt, F. 
17Nov-2001Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin filmsNatarajan, A.; Bera, L.K. ; Choi, W.K. ; Osipowicz, T. ; Seng, H.L. 
18Jul-1997Recent results in ion beam induced charge microscopy: Unconnected junction contrast and an assessment of single contact IBICOsipowicz, T. ; Sanchez, J.L.; Orlić, I. ; Watt, F. ; Kolachina, S.; Ong, V.K.S. ; Chan, D.S.H. ; Phang, J.C.H. 
19May-2003Rutherford backscattering analysis of GaN decompositionChoi, H.W.; Cheong, M.G.; Rana, M.A.; Chua, S.J. ; Osipowicz, T. ; Pan, J.S.
20Jun-2003Stoichiometric and structural alterations in GaN thin films during anneallingRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Watt, F. ; Chua, S.J.