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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Results 61-80 of 186 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
612005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
621-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
6315-Feb-2012Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2Markwitz, A.; Carder, D.A.; Hopf, T.; Kennedy, J.; Chan, T.K. ; Mücklich, A.; Osipowicz, T. 
6415-Feb-2012Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2Markwitz, A.; Carder, D.A.; Hopf, T.; Kennedy, J.; Chan, T.K. ; Mücklich, A.; Osipowicz, T. 
515-Feb-2012Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2Markwitz, A.; Carder, D.A.; Hopf, T.; Kennedy, J.; Chan, T.K. ; Mücklich, A.; Osipowicz, T. 
61-Apr-2002Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopyChew, K.; Rusli; Yoon, S.F.; Ahn, J.; Zhang, Q.; Ligatchev, V.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
7Dec-2011Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opalsKaruturi, S.K.; Liu, L.; Su, L.T.; Chutinan, A.; Kherani, N.P.; Chan, T.K. ; Osipowicz, T. ; Yoong Tok, A.I.
810-May-2006Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealingLiew, S.L.; Balakrisnan, B.; Chow, S.Y.; Lai, M.Y.; Wang, W.D.; Lee, K.Y.; Ho, C.S.; Osipowicz, T. ; Chi, D.Z.
9May-2002High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structuresOsipowicz, T. ; Seng, H.L. ; Wielunski, L.S.; Tok, E.S. ; Breton, G.; Zhang, J.
10Sep-2003High-resolution channeling contrast microscopy of compositionally graded Si1-XGeX layersSeng, H.L. ; Osipowicz, T. ; Sum, T.C. ; Breese, M.B.H. ; Watt, F. ; Tok, E.S. ; Zhang, J.
11Apr-2008HRBS/channeling studies of ultra-thin ITO films on SiMalar, P. ; Chan, T.K. ; Ho, C.S.; Osipowicz, T. 
122-Sep-1999Hydrogen 3D distribution in solids by ERDA imagingYang, C. ; Teo, E.J. ; Osipowicz, T. ; Watt, F. ; Jamieson, D.; Lee, K.K.; Tomcik, B. 
131-Sep-2002Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilutionChew, K.; Rusli; Yoon, S.F.; Ahn, J.; Ligatchev, V.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
14Jul-2001IBIC analysis of high-power devicesOsipowicz, T. ; Zmeck, M.; Watt, F. ; Fiege, G.; Balk, L.; Niedernostheide, F.; Schulze, H.-J.
151998Imaging of charge collection properties of CVD diamond using high-resolution ion beam induced charge technique with protons and alpha particlesJakšić, M.; Tadić, T.; Orlić, I. ; Osipowicz, T. ; Vittone, E.; Manfredotti, C.
161-Feb-2004Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devicesChong, K.B.; Kong, L.B. ; Chen, L. ; Yan, L. ; Tan, C.Y. ; Yang, T.; Ong, C.K. ; Osipowicz, T. 
171999Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputteringZhang, K.; Zhu, F. ; Huan, C.H.A. ; Wee, A.T.S. ; Osipowicz, T. 
18Jan-2007InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterizationZhou, H.; Chua, S.J.; Zang, K.; Wang, L.S.; Tripathy, S.; Yakovlev, N.; Thomas, O. 
19Jun-2000Integrity of copper-tantalum nitride metallization under different ambient conditionsYap, K.P.; Gong, H. ; Dai, J.Y.; Osipowicz, T. ; Chan, L.H.; Lahiri, S.K.
20Apr-2008Interface strain study of thin Lu2O3/Si using HRBSChan, T.K. ; Darmawan, P.; Ho, C.S.; Malar, P. ; Lee, P.S.; Osipowicz, T.