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|Title:||IBIC analysis of high-power devices||Authors:||Osipowicz, T.
|Issue Date:||Jul-2001||Citation:||Osipowicz, T., Zmeck, M., Watt, F., Fiege, G., Balk, L., Niedernostheide, F., Schulze, H.-J. (2001-07). IBIC analysis of high-power devices. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 181 (1-4) : 311-314. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(01)00487-6||Abstract:||The technique of ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse integrated circuits, radiation detectors and solar cells [H. Schöne, D.N. Jamieson, MRS Bull. 25 (2000) 14]. In this work, results from a first attempt to investigate high-power devices with this technique are reported. It is demonstrated that IBIC analysis allows the characterisation of layers of different doping types located several tens of microns below the sample surface with an ion beam energy of 2 MeV. The devices investigated are high-power light-triggered thyristors [M. Ruff, H.-J. Schulze, U. Kellner, IEEE (ED) 46 (1999) 1768; F.-J. Niedernostheide, H.-J. Schulze, J. Dorn, U. Kellner-Werdehausen, D. Westerholt, in: Proceedings of the 12th International Symposium on Power Semiconductors and IC's, ISPSD'2000, Toulouse, France, 2000, p. 267]. © 2001 Elsevier Science B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/98746||ISSN:||0168583X||DOI:||10.1016/S0168-583X(01)00487-6|
|Appears in Collections:||Staff Publications|
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