Please use this identifier to cite or link to this item:
|Title:||IBIC analysis of high-power devices|
|Authors:||Osipowicz, T. |
|Source:||Osipowicz, T., Zmeck, M., Watt, F., Fiege, G., Balk, L., Niedernostheide, F., Schulze, H.-J. (2001-07). IBIC analysis of high-power devices. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 181 (1-4) : 311-314. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(01)00487-6|
|Abstract:||The technique of ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse integrated circuits, radiation detectors and solar cells [H. Schöne, D.N. Jamieson, MRS Bull. 25 (2000) 14]. In this work, results from a first attempt to investigate high-power devices with this technique are reported. It is demonstrated that IBIC analysis allows the characterisation of layers of different doping types located several tens of microns below the sample surface with an ion beam energy of 2 MeV. The devices investigated are high-power light-triggered thyristors [M. Ruff, H.-J. Schulze, U. Kellner, IEEE (ED) 46 (1999) 1768; F.-J. Niedernostheide, H.-J. Schulze, J. Dorn, U. Kellner-Werdehausen, D. Westerholt, in: Proceedings of the 12th International Symposium on Power Semiconductors and IC's, ISPSD'2000, Toulouse, France, 2000, p. 267]. © 2001 Elsevier Science B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Feb 21, 2018
checked on Feb 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.