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|Title:||Interface strain study of thin Lu2O3/Si using HRBS||Authors:||Chan, T.K.
Lu2O3 thin films
|Issue Date:||Apr-2008||Citation:||Chan, T.K., Darmawan, P., Ho, C.S., Malar, P., Lee, P.S., Osipowicz, T. (2008-04). Interface strain study of thin Lu2O3/Si using HRBS. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266 (8) : 1486-1489. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2007.12.090||Abstract:||The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. © 2008 Elsevier B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/96960||ISSN:||0168583X||DOI:||10.1016/j.nimb.2007.12.090|
|Appears in Collections:||Staff Publications|
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