Please use this identifier to cite or link to this item:
|Title:||Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing||Authors:||Liew, S.L.
Rapid thermal processing
|Issue Date:||10-May-2006||Citation:||Liew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z. (2006-05-10). Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing. Thin Solid Films 504 (1-2) : 81-85. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.046||Abstract:||Solid-state reactions between Er and Ge (001) under different processing conditions were investigated. Under normal rapid thermal processing (RTP) in high-purity N2 ambience, the Er-Ge film formation was 'contaminated' with Er2O3 even at low temperature annealing. Ti capping of Er films before RTP delayed Er2O3 formation with the Ti cap acting as a sacrificial layer for the Er underneath. Vacuum annealing of Er films significantly reduced Er2O3 formation even after higher temperature annealing. High quality Er-Ge films can thus be formed through solid-state reaction of Er and Ge if oxygen contamination from annealing ambient during RTP is controlled. The Er-Ge phase had low sheet resistance values averaging 3 to 4 Ω/sq. ErGe1.8 was formed from the solid-state reaction between Er and Ge(001) in vacuum. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/98732||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.046|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 13, 2019
WEB OF SCIENCETM
checked on Sep 5, 2019
checked on Sep 7, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.