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|Title:||Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing||Authors:||Liew, S.L.
Rapid thermal processing
|Issue Date:||10-May-2006||Citation:||Liew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z. (2006-05-10). Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing. Thin Solid Films 504 (1-2) : 81-85. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.046||Abstract:||Solid-state reactions between Er and Ge (001) under different processing conditions were investigated. Under normal rapid thermal processing (RTP) in high-purity N2 ambience, the Er-Ge film formation was 'contaminated' with Er2O3 even at low temperature annealing. Ti capping of Er films before RTP delayed Er2O3 formation with the Ti cap acting as a sacrificial layer for the Er underneath. Vacuum annealing of Er films significantly reduced Er2O3 formation even after higher temperature annealing. High quality Er-Ge films can thus be formed through solid-state reaction of Er and Ge if oxygen contamination from annealing ambient during RTP is controlled. The Er-Ge phase had low sheet resistance values averaging 3 to 4 Ω/sq. ErGe1.8 was formed from the solid-state reaction between Er and Ge(001) in vacuum. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/98732||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.046|
|Appears in Collections:||Staff Publications|
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