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https://doi.org/10.1016/j.jcrysgro.2006.10.067
Title: | InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization | Authors: | Zhou, H. Chua, S.J. Zang, K. Wang, L.S. Tripathy, S. Yakovlev, N. Thomas, O. |
Keywords: | A1. Multiple quantum wells A1. Optical properties A3. Epitaxial lateral overgrowth B1. InGaN |
Issue Date: | Jan-2007 | Citation: | Zhou, H., Chua, S.J., Zang, K., Wang, L.S., Tripathy, S., Yakovlev, N., Thomas, O. (2007-01). InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization. Journal of Crystal Growth 298 (SPEC. ISS) : 511-514. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.10.067 | Abstract: | Epitaxial lateral overgrowth of gallium nitride with (1 1 over(2, -) 2) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate on (0 0 0 1) plane compared to (1 1 over(2, -) 2) facet. The well thickness and In composition of the quantum wells (QWs) were analyzed by the cross-sectional and high resolution X-ray diffraction (HR-XRD) measurements. Micro photoluminescence spectra confirmed that the ELO InGaN/GaN MQWs structures on the (1 1 over(2, -) 2) plane provide nearly multi-wavelengths output light. This is suitable for display devices based on the white color optical system. © 2006. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/96938 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2006.10.067 |
Appears in Collections: | Staff Publications |
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