Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2006.10.067
Title: InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
Authors: Zhou, H.
Chua, S.J.
Zang, K.
Wang, L.S.
Tripathy, S.
Yakovlev, N.
Thomas, O. 
Keywords: A1. Multiple quantum wells
A1. Optical properties
A3. Epitaxial lateral overgrowth
B1. InGaN
Issue Date: Jan-2007
Source: Zhou, H., Chua, S.J., Zang, K., Wang, L.S., Tripathy, S., Yakovlev, N., Thomas, O. (2007-01). InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization. Journal of Crystal Growth 298 (SPEC. ISS) : 511-514. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.10.067
Abstract: Epitaxial lateral overgrowth of gallium nitride with (1 1 over(2, -) 2) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate on (0 0 0 1) plane compared to (1 1 over(2, -) 2) facet. The well thickness and In composition of the quantum wells (QWs) were analyzed by the cross-sectional and high resolution X-ray diffraction (HR-XRD) measurements. Micro photoluminescence spectra confirmed that the ELO InGaN/GaN MQWs structures on the (1 1 over(2, -) 2) plane provide nearly multi-wavelengths output light. This is suitable for display devices based on the white color optical system. © 2006.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/96938
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.10.067
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