1. ScholarBank@NUS

Osipowicz Thomas

rp05639

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Results 141-160 of 186 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
141Jul-1997Recent results in ion beam induced charge microscopy: Unconnected junction contrast and an assessment of single contact IBICOsipowicz, T. ; Sanchez, J.L.; Orlić, I. ; Watt, F. ; Kolachina, S.; Ong, V.K.S. ; Chan, D.S.H. ; Phang, J.C.H. 
1422-Mar-1994Reconstruction of Ar depth profiles from PIXE measurementsOsipowicz, T. ; Liew, S.C. ; Loh, K.K. ; Orlic, I. ; Tang, S.M. ; Weber, Th.
143Apr-2011Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiationWang, G.H.; Wong, T.-C.; Wang, X.-C.; Zheng, H.-Y.; Chan, T.-K. ; Osipowicz, T. ; Foo, Y.-L.; Tripathy, S.
1442-Sep-1999Resist materials for proton micromachiningVan Kan, J.A. ; Sanchez, J.L.; Xu, B.; Osipowicz, T. ; Watt, F. 
145May-2003Rutherford backscattering analysis of GaN decompositionChoi, H.W.; Cheong, M.G.; Rana, M.A.; Chua, S.J. ; Osipowicz, T. ; Pan, J.S.
146Dec-2008Selective growth of ZnO nanorod arrays on a GaN/sapphire substrate using a proton beam written maskZhou, H.L.; Shao, P.G. ; Chua, S.J.; Van Kan, J.A. ; Bettiol, A.A. ; Osipowicz, T. ; Ooi, K.F.; Goh, G.K.L.; Watt, F. 
147Jul-2007Sidewall quality in proton beam writingChiam, S.Y. ; van Kan, J.A. ; Osipowicz, T. ; Udalagama, C.N.B. ; Watt, F. 
14820-Aug-2012Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometryChan, T.K. ; Fang, F.; Markwitz, A.; Osipowicz, T. 
1492008Spectral properties of thick split ring resonators in the THz regimeChiam, S.-Y. ; Han, J. ; Singh, R.; Zhang, W.; Osipowicz, T. ; Bettiol, A.A. 
150Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
151Jun-2003Stoichiometric and structural alterations in GaN thin films during anneallingRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Watt, F. ; Chua, S.J. 
15214-Jul-2003Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
1532007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1542008Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAlQiu, J.J.; Han, G.C.; Yeo, W.K.; Luo, P.; Guo, Z.B.; Osipowicz, T. 
1551-Aug-2011Structural and photoluminescence properties of Gd implanted ZnO single crystalsMurmu, P.P.; Mendelsberg, R.J.; Kennedy, J.; Carder, D.A.; Ruck, B.J.; Markwitz, A.; Reeves, R.J.; Malar, P. ; Osipowicz, T. 
156Sep-2000Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic He+ irradiation and thermal annealingZhang, Q.; Yoon, S.F.; Ahn, J.; Rusli, X.; Yang, H.; Gan, B.; Yang, C. ; Watt, F. ; Teo, E.J. ; Osipowice, T. 
1572007Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te systemSreenivasan, M.G.; Teo, K.L. ; Cheng, X.Z.; Jalil, M.B.A.; Liew, T.; Chong, T.C.; Du, A.Y.; Chan, T.K. ; Osipowicz, T. 
15813-Oct-2011Structure of melt-quenched AgIn3Te5Rangasami, C.; Malar, P. ; Osipowicz, T. ; Jain, M.K.; Kasiviswanathan, S.
15927-Dec-1999Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2Lee, Y.K.; Maung Latt, K.; Jaehyung, K.; Osipowicz, T. ; Lee, K.
160Jun-2000Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structureLee, Y.K.; Latt, K.M.; Osipowicz, T. ; Sher-Yi, C.