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|Title:||Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy||Authors:||Nakajima, K.
|Issue Date:||14-Jul-2003||Citation:||Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310||Abstract:||High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/98031||ISSN:||00036951||DOI:||10.1063/1.1592310|
|Appears in Collections:||Staff Publications|
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