Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1592310

Title:	Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
Authors:	Nakajima, K. Joumori, S. Suzuki, M. Kimura, K. Osipowicz, T. Tok, K.L. Zheng, J.Z. See, A. Zhang, B.C.
Issue Date:	14-Jul-2003
Citation:	Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310
Abstract:	High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/98031
ISSN:	00036951
DOI:	10.1063/1.1592310
Appears in Collections:	Staff Publications

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