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https://doi.org/10.1063/1.1592310
| Title: | Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy | Authors: | Nakajima, K. Joumori, S. Suzuki, M. Kimura, K. Osipowicz, T. Tok, K.L. Zheng, J.Z. See, A. Zhang, B.C. |
Issue Date: | 14-Jul-2003 | Citation: | Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310 | Abstract: | High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/98031 | ISSN: | 00036951 | DOI: | 10.1063/1.1592310 |
| Appears in Collections: | Staff Publications |
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