Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1592310
| Title: | Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy | Authors: | Nakajima, K. Joumori, S. Suzuki, M. Kimura, K. Osipowicz, T. Tok, K.L. Zheng, J.Z. See, A. Zhang, B.C. |
Issue Date: | 14-Jul-2003 | Citation: | Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310 | Abstract: | High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/98031 | ISSN: | 00036951 | DOI: | 10.1063/1.1592310 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
23
checked on Oct 21, 2021
WEB OF SCIENCETM
Citations
25
checked on Oct 21, 2021
Page view(s)
91
checked on Oct 14, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.