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https://doi.org/10.1063/1.4747487
Title: | Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry | Authors: | Chan, T.K. Fang, F. Markwitz, A. Osipowicz, T. |
Issue Date: | 20-Aug-2012 | Citation: | Chan, T.K., Fang, F., Markwitz, A., Osipowicz, T. (2012-08-20). Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry. Applied Physics Letters 101 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4747487 | Abstract: | We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/97961 | ISSN: | 00036951 | DOI: | 10.1063/1.4747487 |
Appears in Collections: | Staff Publications |
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