Please use this identifier to cite or link to this item:
Title: Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure
Authors: Lee, Y.K.
Latt, K.M.
Osipowicz, T. 
Sher-Yi, C. 
Issue Date: Jun-2000
Citation: Lee, Y.K., Latt, K.M., Osipowicz, T., Sher-Yi, C. (2000-06). Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure. Materials Science in Semiconductor Processing 3 (3) : 191-194. ScholarBank@NUS Repository.
Abstract: The effects of aluminum (Al) incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000 °C in the Cu/TixAlyNz/SiO2/Si structure. The thermal stability of the structure was evaluated by using four-point probe, X-ray diffraction, and Rutherford Backscattering Spectroscopy. The Cu/TixAlyNz/SiO2/Si system retained its structure up to 1000 °C. The incorporation of Al into the TixNy film modified the microstructure of the TixNy film, especially the microstructure of grain boundaries in which oxide and nitride compounds of Al and Ti were formed during thermal annealing. As a result, the fast pathways for copper (Cu) diffusion were effectively blocked by these compounds and the stability of the barrier performance was enhanced up to 1000 °C.
Source Title: Materials Science in Semiconductor Processing
ISSN: 13698001
DOI: 10.1016/S1369-8001(00)00031-7
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.