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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Results 81-100 of 186 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
8115-Jun-2002Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealingLatt, K.M.; Lee, Y.K.; Osipowicz, T. ; Park, H.S.
822-Sep-1999Investigation of light emitting diodes using nuclear microprobesYang, C. ; Bettiol, A.; Jamieson, D.; Hua, X.; Phang, J.C.H. ; Chan, D.S.H. ; Watt, F. ; Osipowicz, T. 
83Sep-2000Investigation of molybdenum-carbon films (Mo-C:H) deposited using an electron cyclotron resonance chemical vapor deposition systemRusli; Yoon, S.F.; Huang, Q.F.; Yang, H.; Yu, M.B.; Ahn, J.; Zhang, Q.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
842011Investigation of multi-resolution support for MeV ion microscopy imagingWhitlow, H.J.; Norarat, R.; Sajavaara, T.; Laitinen, M.; Ranttila, K.; Heikkinen, P.; Hänninen, V.; Rossi, M.; Jones, P.; Timonen, J.; Gilbert, L.K.; Marjomäki, V.; Ren, M. ; Van Kan, J.A. ; Osipowicz, T. ; Watt, F. 
851997Ion Beam Induced Charge imaging for the failure analysis of semiconductor devicesKolachina, S.; Chan, D.S.H. ; Phang, J.C.H. ; Osipowicz, T. ; Sanchez, J.L.; Watt, F. 
8621-Jan-2004Ion beam induced charge microscopy studies of power diodesZmeck, M.; Balk, L.J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
87Apr-2008Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin filmsSarath Kumar, S.R.; Malar, P. ; Osipowicz, T. ; Banerjee, S.S.; Kasiviswanathan, S.
881-Jul-2012Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiationDevaraju, G.; Nageswara Rao, S.V.S.; Rao, N.S.; Saikiran, V.; Chan, T.K. ; Osipowicz, T. ; Breese, M.B.H. ; Pathak, A.P.
89Mar-1998L X-ray production cross sections of medium Z elements by 4He ion impactOrlić, I. ; Osipowicz, T. ; Sow, C.H. 
902-Mar-1994L X-ray production cross sections of medium Z elements for 0.4 to 2.0 MeV protonsSow, C.H. ; Orlic, I. ; Osipowicz, T. ; Tang, S.M. 
912009Lanthanide-based graded barrier structure for enhanced nanocrystal memory propertiesChan, M.Y.; Chan, T.K. ; Osipowicz, T. ; Chan, L.; Lee, P.S.
92Sep-2004Laser synthesis of new materialsSong, W.D.; Hong, M.H.; Osipowicz, T. ; Dai, D.Y.; Pang, S.I.; Peng, Y.Z.; Chong, J.F.; An, C.W.; Liew, Y.F.; Chong, T.C.
93Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
946-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
952014Localized surface plasmon resonance in Au nanoparticles embedded dc sputtered ZnO thin filmsPatra A.; Balasubrahmaniyam M.; Laha R.; PIRAVI PERUMAL MALAR ; Osipowicz Thomas ; Manivannan A.; Kasiviswanathan S.
962008Low-temperature epitaxy of KTaO3 and KNbO3 filmsGoh, G.K.L.; Chan, K.Y.S.; Tan, B.S.K.; Zhang, Y.W. ; Kim, J.H.; Osipowicz, T. 
972008Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devicesDarmawan, P.; Chan, M.Y.; Zhang, T.; Setiawan, Y.; Seng, H.L.; Chan, T.K. ; Osipowicz, T. ; Lee, P.S.
9818-May-2006Magnetic and transport properties of Ge : MMMn granular systemLi, H.; Wu, Y. ; Liu, T. ; Wang, S.; Guo, Z.; Osipowicz, T. 
993-Apr-1993Measurement of phosphorus content in silica layersLoh, K.K. ; Sow, C.H. ; Tan, K.H. ; Tan, H.S. ; Tang, S.M. ; Orlic, I. ; Osipowicz, T. 
100Oct-2006Measurements of the stopping forces for heavy ions in Ge, Ag and Au using novel 'polka-dot' detectorsWeijers-Dall, T.D.M.; Timmers, H.; Stenström, K.; Persson, P.; Pergjegjaj, A.; Wang, X.; Graczyk, M.; Osipowicz, T. ; Ren, M.Q. ; O'Connor, D.J.; Whitlow, H.J.