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|Title:||Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation||Authors:||Devaraju, G.
Nageswara Rao, S.V.S.
swift heavy ion irradiation
|Issue Date:||1-Jul-2012||Citation:||Devaraju, G., Nageswara Rao, S.V.S., Rao, N.S., Saikiran, V., Chan, T.K., Osipowicz, T., Breese, M.B.H., Pathak, A.P. (2012-07-01). Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation. Radiation Effects and Defects in Solids 167 (7) : 506-511. ScholarBank@NUS Repository. https://doi.org/10.1080/10420150.2012.662977||Abstract:||Ion beam-induced intermixing is of great interest and has been observed in various systems such as metal-semiconductor interfaces. However, similar effects in III-nitrides have not been studied in any detail, yet. In the present study, swift heavy ion-induced intermixing of nearly lattice-matched Al (1-x) In x N/GaN heterostructures have been investigated using Rutherford backscattering spectrometry and high-resolution X-ray diffraction techniques. Inter-diffusion of Ga and In elements across the Al (1-x) In x N/GaN interface and the consequent formation of a new mixed quaternary alloy (AlGaInN) layer have been observed. The influence of electronic energy loss of SHI on intermixing effects has been studied. © 2012 Copyright Taylor and Francis Group, LLC.||Source Title:||Radiation Effects and Defects in Solids||URI:||http://scholarbank.nus.edu.sg/handle/10635/98770||ISSN:||10420150||DOI:||10.1080/10420150.2012.662977|
|Appears in Collections:||Staff Publications|
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