Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3224188
Title: Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
Authors: Chan, M.Y.
Chan, T.K. 
Osipowicz, T. 
Chan, L.
Lee, P.S.
Issue Date: 2009
Citation: Chan, M.Y., Chan, T.K., Osipowicz, T., Chan, L., Lee, P.S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied Physics Letters 95 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3224188
Abstract: A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high- k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high- k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97033
ISSN: 00036951
DOI: 10.1063/1.3224188
Appears in Collections:Staff Publications

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