Please use this identifier to cite or link to this item:
|Title:||Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties||Authors:||Chan, M.Y.
|Issue Date:||2009||Citation:||Chan, M.Y., Chan, T.K., Osipowicz, T., Chan, L., Lee, P.S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied Physics Letters 95 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3224188||Abstract:||A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high- k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high- k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window. © 2009 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/97033||ISSN:||00036951||DOI:||10.1063/1.3224188|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.