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|Title:||Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices||Authors:||Darmawan, P.
|Issue Date:||2008||Citation:||Darmawan, P., Chan, M.Y., Zhang, T., Setiawan, Y., Seng, H.L., Chan, T.K., Osipowicz, T., Lee, P.S. (2008). Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2970036||Abstract:||Effect of Ge out diffusion into Lu2O3/Al2O high- k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high- k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/97111||ISSN:||00036951||DOI:||10.1063/1.2970036|
|Appears in Collections:||Staff Publications|
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