Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1638615

Title:	Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices
Authors:	Chong, K.B. Kong, L.B. Chen, L. Yan, L. Tan, C.Y. Yang, T. Ong, C.K. Osipowicz, T.
Issue Date:	1-Feb-2004
Citation:	Chong, K.B., Kong, L.B., Chen, L., Yan, L., Tan, C.Y., Yang, T., Ong, C.K., Osipowicz, T. (2004-02-01). Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices. Journal of Applied Physics 95 (3) : 1416-1419. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1638615
Abstract:	Highly c-axis oriented Al2O3 doped BST films that could be deposited on (100) LaAlO3 single-crystal substrates by PLD technique was demonstrated. The Al2O3 substitution into BST films was observed to significantly modify the microstructure of the films. It was found that the Al2O3 doping significantly improved the dielectric loss tangent of the BST thin films.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/115770
ISSN:	00218979
DOI:	10.1063/1.1638615
Appears in Collections:	Staff Publications

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