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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 121-140 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121Dec-2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETsYu, D.S.; Wu, C.H.; Huang, C.H.; Chin, A.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
1222003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETsHuang, C.H.; Yu, D.S.; Chin, A.; Wu, C.H.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
123May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, C.Y.; Ma, M.W.; Chin, A.; Yeo, Y.C. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
124Aug-2004Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobilityYu, D.S.; Chiang, K.C.; Cheng, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
12527-Oct-1997GaN exciton photovoltaic spectra at room temperatureLiu, W.; Li, M.F. ; Chua, S.J. ; Zhang, Y.H. ; Uchida, K.
1261997GaN room temperature exciton spectra by photovoltaic measurementLiu, W.; Li, M.F. ; Chua, S.J. ; Zhang, Y.H. ; Uchida, K.
127May-2001Gate-induced drain leakage current enhanced by plasma charging damageMa, S.; Zhang, Y.; Li, M.F. ; Li, W.; Xie, J.; Sheng, G.T.T.; Yen, A.C.; Wang, J.L.F.
1282003Germanium MOS: An Evaluation from Carrier Quantization and Tunneling CurrentLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Kwong, D.-L.; Chin, A.
129Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
1302003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
131Oct-2004HfO2 gate dielectrics for future generation of CMOS device applicationYu, H.Y. ; Kang, J.F.; Ren, C.; Li, M.F. ; Kwong, D.L.
1322005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
1332006High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3Ding, S.-J.; Zhang, M.; Chen, W.; Zhang, D.W.; Wang, L.-K.; Wang, X.P.; Zhu, C. ; Li, M.-F. 
1342003High density RF MIM capacitors using high-κ AlTaOx dielectricsHuang, C.H.; Yang, M.Y.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
1352004High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectricYu, X.; Zhu, C. ; Wang, X.P.; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
1362003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
1372004High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technologyChin, A.; Kao, H.L.; Yu, D.S.; Liao, C.C.; Zhu, C. ; Li, M.-F. ; Zhu, S. ; Kwong, D.-L.
1381-Aug-2005High performance P-channel schottky barrier MOSFETs with self-aligned PtSi source/drain on thin film SOI substrateZhu, S.-Y. ; Li, M.-F. 
1392006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Chen, W.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
140Feb-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, C.H.; Yu, D.S.; Chin, A.; Wang, S.J.; Li, M.-F. ; Zhu, C. ; Hung, B.F.; McAlister, S.P.