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|Title:||Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs||Authors:||Yu, D.S.
|Issue Date:||Dec-2003||Citation:||Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Zhu, C., Li, M.F., Kwong, D.-L. (2003-12). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs. IEEE Electron Device Letters 24 (12) : 739-741. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819274||Abstract:||We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82390||ISSN:||07413106||DOI:||10.1109/LED.2003.819274|
|Appears in Collections:||Staff Publications|
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