Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2003.819274
Title: | Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs | Authors: | Yu, D.S. Wu, C.H. Huang, C.H. Chin, A. Chen, W.J. Zhu, C. Li, M.F. Kwong, D.-L. |
Keywords: | MOSFET NiGe NiSi |
Issue Date: | Dec-2003 | Citation: | Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Zhu, C., Li, M.F., Kwong, D.-L. (2003-12). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs. IEEE Electron Device Letters 24 (12) : 739-741. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819274 | Abstract: | We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82390 | ISSN: | 07413106 | DOI: | 10.1109/LED.2003.819274 |
Appears in Collections: | Staff Publications |
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