Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2003.819274
Title: | Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs | Authors: | Yu, D.S. Wu, C.H. Huang, C.H. Chin, A. Chen, W.J. Zhu, C. Li, M.F. Kwong, D.-L. |
Keywords: | MOSFET NiGe NiSi |
Issue Date: | Dec-2003 | Citation: | Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Zhu, C., Li, M.F., Kwong, D.-L. (2003-12). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs. IEEE Electron Device Letters 24 (12) : 739-741. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819274 | Abstract: | We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82390 | ISSN: | 07413106 | DOI: | 10.1109/LED.2003.819274 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
21
checked on Jan 31, 2023
WEB OF SCIENCETM
Citations
16
checked on Jan 31, 2023
Page view(s)
211
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.