Please use this identifier to cite or link to this item:
Title: GaN exciton photovoltaic spectra at room temperature
Authors: Liu, W.
Li, M.F. 
Chua, S.J. 
Zhang, Y.H. 
Uchida, K.
Issue Date: 27-Oct-1997
Citation: Liu, W.,Li, M.F.,Chua, S.J.,Zhang, Y.H.,Uchida, K. (1997-10-27). GaN exciton photovoltaic spectra at room temperature. Applied Physics Letters 71 (17) : 2511-2513. ScholarBank@NUS Repository.
Abstract: Clear exciton absorption peak has been observed at room temperature by photovoltaic spectra, on a GaN layer grown on (0001)-plane sapphire by metalorganic chemical vapor deposition. From the spectra, we obtained the wurtzite GaN room temperature A and B exciton transition energies, and the energy gap to be 3.401, 3.408, and 3.426 eV, respectively. We have also performed photovoltaic measurements with varied light incidence angles, and observed the polarization behavior of exciton absorption in GaN. In conjunction with previous room temperature photoreflectance measurements, this work provided direct and reliable assessment of GaN semiconductor crystal layers. © 1997 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 23, 2022

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.