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|Title:||Gate-induced drain leakage current enhanced by plasma charging damage||Authors:||Ma, S.
Plasma charging damage
|Issue Date:||May-2001||Citation:||Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F. (2001-05). Gate-induced drain leakage current enhanced by plasma charging damage. IEEE Transactions on Electron Devices 48 (5) : 1006-1008. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918252||Abstract:||Correlation between gate-induced drain leakage current (GIDL) current I GIDL and plasma charging damage is investigated for the p-MOSFETs. I GIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I GIDL is mainly attributed to the increase of Si/SiO 2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82401||ISSN:||00189383||DOI:||10.1109/16.918252|
|Appears in Collections:||Staff Publications|
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