Please use this identifier to cite or link to this item:
https://doi.org/10.1109/16.918252
| Title: | Gate-induced drain leakage current enhanced by plasma charging damage | Authors: | Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. |
Keywords: | CMOSFET Leakage current Plasma charging damage |
Issue Date: | May-2001 | Citation: | Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F. (2001-05). Gate-induced drain leakage current enhanced by plasma charging damage. IEEE Transactions on Electron Devices 48 (5) : 1006-1008. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918252 | Abstract: | Correlation between gate-induced drain leakage current (GIDL) current I GIDL and plasma charging damage is investigated for the p-MOSFETs. I GIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I GIDL is mainly attributed to the increase of Si/SiO 2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82401 | ISSN: | 00189383 | DOI: | 10.1109/16.918252 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
7
checked on Jun 12, 2021
WEB OF SCIENCETM
Citations
6
checked on Jun 12, 2021
Page view(s)
84
checked on Jun 9, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.