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https://doi.org/10.1109/16.918252
| Title: | Gate-induced drain leakage current enhanced by plasma charging damage | Authors: | Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. |
Keywords: | CMOSFET Leakage current Plasma charging damage |
Issue Date: | May-2001 | Citation: | Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F. (2001-05). Gate-induced drain leakage current enhanced by plasma charging damage. IEEE Transactions on Electron Devices 48 (5) : 1006-1008. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918252 | Abstract: | Correlation between gate-induced drain leakage current (GIDL) current I GIDL and plasma charging damage is investigated for the p-MOSFETs. I GIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I GIDL is mainly attributed to the increase of Si/SiO 2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82401 | ISSN: | 00189383 | DOI: | 10.1109/16.918252 |
| Appears in Collections: | Staff Publications |
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