Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.918252
DC FieldValue
dc.titleGate-induced drain leakage current enhanced by plasma charging damage
dc.contributor.authorMa, S.
dc.contributor.authorZhang, Y.
dc.contributor.authorLi, M.F.
dc.contributor.authorLi, W.
dc.contributor.authorXie, J.
dc.contributor.authorSheng, G.T.T.
dc.contributor.authorYen, A.C.
dc.contributor.authorWang, J.L.F.
dc.date.accessioned2014-10-07T04:28:58Z
dc.date.available2014-10-07T04:28:58Z
dc.date.issued2001-05
dc.identifier.citationMa, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F. (2001-05). Gate-induced drain leakage current enhanced by plasma charging damage. IEEE Transactions on Electron Devices 48 (5) : 1006-1008. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918252
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82401
dc.description.abstractCorrelation between gate-induced drain leakage current (GIDL) current I GIDL and plasma charging damage is investigated for the p-MOSFETs. I GIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I GIDL is mainly attributed to the increase of Si/SiO 2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.918252
dc.sourceScopus
dc.subjectCMOSFET
dc.subjectLeakage current
dc.subjectPlasma charging damage
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/16.918252
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume48
dc.description.issue5
dc.description.page1006-1008
dc.description.codenIETDA
dc.identifier.isiut000168361000027
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on May 16, 2022

WEB OF SCIENCETM
Citations

7
checked on May 16, 2022

Page view(s)

152
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.