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|Title:||Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate||Authors:||Zhu, S.
|Issue Date:||Feb-2005||Citation:||Zhu, S., Li, R., Lee, S.J., Li, M.F., Du, A., Singh, J., Zhu, C., Chin, A., Kwong, D.L. (2005-02). Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate. IEEE Electron Device Letters 26 (2) : 81-83. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841462||Abstract:||Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56137||ISSN:||07413106||DOI:||10.1109/LED.2004.841462|
|Appears in Collections:||Staff Publications|
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