Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.841462
Title: Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
Authors: Zhu, S. 
Li, R.
Lee, S.J. 
Li, M.F. 
Du, A.
Singh, J.
Zhu, C. 
Chin, A.
Kwong, D.L.
Keywords: Germanium
High-Κ
Metal gate
MOSFET
Schottky
Issue Date: Feb-2005
Citation: Zhu, S., Li, R., Lee, S.J., Li, M.F., Du, A., Singh, J., Zhu, C., Chin, A., Kwong, D.L. (2005-02). Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate. IEEE Electron Device Letters 26 (2) : 81-83. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841462
Abstract: Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56137
ISSN: 07413106
DOI: 10.1109/LED.2004.841462
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