1. ScholarBank@NUS

Han Genquan

rp09719

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Full Name
Han Genquan
(not current staff)
Variants
Han, G.-Q.
Han, G.
 
Main Affiliation
 
Faculty
 
Email
elehg@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2010 TO 2020]
Author:  Yang, Y.
Author:  Wang, W.

Results 1-19 of 19 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12013(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETsZhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. 
2May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
32012Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal GateGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
428-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
52013Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivationGuo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. 
62012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
721-May-2013Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation studyYang, Y.; Lu Low, K.; Wang, W.; Guo, P.; Wang, L.; Han, G. ; Yeo, Y.-C. 
82012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
92012In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effectsHan, G. ; Zhou, Q. ; Guo, P.; Wang, W.; Yang, Y.; Yeo, Y.-C. 
102012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
112012(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETsWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
122013Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregationTong, Y.; Han, G. ; Liu, B.; Yang, Y.; Wang, L.; Wang, W.; Yeo, Y.-C. 
132012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
142013Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
152013Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOSGong, X.; Han, G. ; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Kong, E.Y.-J.; Su, S.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
162012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
172012Tin-incorporated source/drain and channel materials for field-effect transistorsYeo, Y.-C. ; Han, G. ; Gong, X.; Wang, L.; Wang, W.; Yang, Y.; Guo, P.; Liu, B.; Su, S.; Zhang, G.; Xue, C.; Cheng, B.
182012Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)Yang, Y.; Su, S.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
192012Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOTGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C.