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|Title:||Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)||Authors:||Yang, Y.
|Issue Date:||2012||Citation:||Yang, Y.,Su, S.,Guo, P.,Wang, W.,Gong, X.,Wang, L.,Low, K.L.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn). Technical Digest - International Electron Devices Meeting, IEDM : 16.3.1-16.3.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2012.6479053||Abstract:||Tunneling field-effect transistor (TFET) could achieve sub-60 mV/decade subthreshold swing S at room temperature and could enable ultra-low supply voltage VDD and power consumption. Drive current above 100 μA/μm was achieved in III-V-based n-channel TFETs (nTFETs), due to the direct BTBT and high electron mobility in III-V materials [1-2]. However, more research is needed for p-channel TFET (pTFET). While III-V materials have high direct band-to-band tunneling (BTBT) rate, hole mobilities are generally low and lead to high channel resistance [Fig. 1(b)]. SiGe or Ge have high hole mobility and might be promising for pTFETs, but the the BTBT is indirect and the on-state current is low. Also, high activation temperature and large diffusivity of n-type dopants in Ge make it very difficult to form good N+/P junction in Ge. © 2012 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/84314||ISBN:||9781467348706||ISSN:||01631918||DOI:||10.1109/IEDM.2012.6479053|
|Appears in Collections:||Staff Publications|
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