Please use this identifier to cite or link to this item:
|Title:||Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation||Authors:||Wang, L.
|Issue Date:||2013||Citation:||Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C. (2013). Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation. Solid-State Electronics 83 : 66-70. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.01.031||Abstract:||High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)2S] surface passivation were demonstrated. A ∼10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on Ge (100) substrate as the channel layer. (NH4)2S surface passivation was performed for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with (NH 4)2S passivation show decent electrical characteristics and a peak effective mobility of 509 cm2/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so far. © 2013 Elsevier Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83077||ISSN:||00381101||DOI:||10.1016/j.sse.2013.01.031|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 17, 2019
WEB OF SCIENCETM
checked on Jun 10, 2019
checked on May 24, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.