Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210151
Title: Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
Authors: Wang, L.
Han, G. 
Su, S.
Zhou, Q. 
Yang, Y.
Guo, P.
Wang, W.
Tong, Y.
Lim, P.S.Y.
Xue, C.
Wang, Q.
Cheng, B.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Wang, L.,Han, G.,Su, S.,Zhou, Q.,Yang, Y.,Guo, P.,Wang, W.,Tong, Y.,Lim, P.S.Y.,Xue, C.,Wang, Q.,Cheng, B.,Yeo, Y.-C. (2012). Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210151
Abstract: We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge 0.947Sn 0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Pt x(GeSn) y] contact on epitaxial Ge 0.947Sn 0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350°C to 550°C in N 2 was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Pt x(GeSn) y, exhibits enhanced thermal stability in a wide range of formation temperatures. © 2012 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83944
ISBN: 9781457720840
ISSN: 19308868
DOI: 10.1109/VLSI-TSA.2012.6210151
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.