Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2012.6242479
Title: Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
Authors: Han, G. 
Su, S.
Wang, L.
Wang, W.
Gong, X.
Yang, Y.
Ivana
Guo, P.
Guo, C.
Zhang, G.
Pan, J.
Zhang, Z.
Xue, C.
Cheng, B.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Han, G.,Su, S.,Wang, L.,Wang, W.,Gong, X.,Yang, Y.,Ivana,Guo, P.,Guo, C.,Zhang, G.,Pan, J.,Zhang, Z.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2012). Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer. Digest of Technical Papers - Symposium on VLSI Technology : 97-98. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2012.6242479
Abstract: GeSn nMOSFETs were demonstrated. Key highlights of this work include 400°C GeSn n +/p junction formation and GeSnO 2 interfacial layer formation, and their integration. GeSn n +/p junction demonstrate a high doping concentration of 10 20 cm -3 and a record high forward bias current of 320 A/cm 2. Substantially improved SS is achieved in GeSn nMOSFET in comparison with Ge control, which indicates the high quality of the GeSnO 2/GeSn interface. © 2012 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84231
ISBN: 9781467308458
ISSN: 07431562
DOI: 10.1109/VLSIT.2012.6242479
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