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|Title:||Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT||Authors:||Gong, X.
|Issue Date:||2012||Citation:||Gong, X.,Su, S.,Liu, B.,Wang, L.,Wang, W.,Yang, Y.,Kong, E.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT. Digest of Technical Papers - Symposium on VLSI Technology : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2012.6242480||Abstract:||We report a novel common gate stack solution for Ge 1-xSn x P-MOSFET and In 0.7Ga 0.3As N-MOSFET, featuring sub-400°C Si 2H 6 passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric V TH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world's first GeSn short-channel device with gate length L G down to 250 nm was realized. Drive current of more than 1000 μA/μm was achieved, with peak intrinsic transconductance of ∼ 465 μS/μm at V DS of -1.1 V. © 2012 IEEE.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/84315||ISBN:||9781467308458||ISSN:||07431562||DOI:||10.1109/VLSIT.2012.6242480|
|Appears in Collections:||Staff Publications|
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