Please use this identifier to cite or link to this item:
https://doi.org/10.1149/05009.0931ecst
| Title: | Tin-incorporated source/drain and channel materials for field-effect transistors | Authors: | Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B. |
Issue Date: | 2012 | Citation: | Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst | Abstract: | We discuss technologies for the incorporation of substitutional Sn in the source/drain regions for strain engineering of SiGe and Ge channel MOSFETs. We also discuss recent work on the realization of GeSn channel p-MOSFETs and n-MOSFETs. © The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/72032 | ISBN: | 9781607683575 | ISSN: | 19385862 | DOI: | 10.1149/05009.0931ecst |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
4
checked on Feb 2, 2023
WEB OF SCIENCETM
Citations
4
checked on Feb 2, 2023
Page view(s)
145
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.