Tin-incorporated source/drain and channel materials for field-effect transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0931ecst

Title:	Tin-incorporated source/drain and channel materials for field-effect transistors
Authors:	Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B.
Issue Date:	2012
Citation:	Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst
Abstract:	We discuss technologies for the incorporation of substitutional Sn in the source/drain regions for strain engineering of SiGe and Ge channel MOSFETs. We also discuss recent work on the realization of GeSn channel p-MOSFETs and n-MOSFETs. © The Electrochemical Society.
Source Title:	ECS Transactions
URI:	http://scholarbank.nus.edu.sg/handle/10635/72032
ISBN:	9781607683575
ISSN:	19385862
DOI:	10.1149/05009.0931ecst
Appears in Collections:	Staff Publications

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