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https://doi.org/10.1149/05009.0931ecst
| Title: | Tin-incorporated source/drain and channel materials for field-effect transistors | Authors: | Yeo, Y.-C. Han, G. Gong, X. Wang, L. Wang, W. Yang, Y. Guo, P. Liu, B. Su, S. Zhang, G. Xue, C. Cheng, B. |
Issue Date: | 2012 | Citation: | Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst | Abstract: | We discuss technologies for the incorporation of substitutional Sn in the source/drain regions for strain engineering of SiGe and Ge channel MOSFETs. We also discuss recent work on the realization of GeSn channel p-MOSFETs and n-MOSFETs. © The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/72032 | ISBN: | 9781607683575 | ISSN: | 19385862 | DOI: | 10.1149/05009.0931ecst |
| Appears in Collections: | Staff Publications |
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