Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0931ecst
Title: Tin-incorporated source/drain and channel materials for field-effect transistors
Authors: Yeo, Y.-C. 
Han, G. 
Gong, X.
Wang, L.
Wang, W.
Yang, Y.
Guo, P.
Liu, B.
Su, S.
Zhang, G.
Xue, C.
Cheng, B.
Issue Date: 2012
Citation: Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst
Abstract: We discuss technologies for the incorporation of substitutional Sn in the source/drain regions for strain engineering of SiGe and Ge channel MOSFETs. We also discuss recent work on the realization of GeSn channel p-MOSFETs and n-MOSFETs. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/72032
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0931ecst
Appears in Collections:Staff Publications

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