Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISTDM.2012.6222449
| Title: | (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs | Authors: | Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. |
Issue Date: | 2012 | Citation: | Wang, L.,Su, S.,Wang, W.,Gong, X.,Yang, Y.,Guo, P.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 44-45. ScholarBank@NUS Repository. https://doi.org/10.1109/ISTDM.2012.6222449 | Abstract: | In this work, we report high mobility Ge 0.958Sn 0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge 0.958Sn 0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/Vs and a subthreshold swing S of 220 mV/decade. © 2012 IEEE. | Source Title: | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/83287 | ISBN: | 9781457718625 | DOI: | 10.1109/ISTDM.2012.6222449 |
| Appears in Collections: | Staff Publications |
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