Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISTDM.2012.6222449
Title: (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
Authors: Wang, L.
Su, S.
Wang, W.
Gong, X.
Yang, Y.
Guo, P.
Zhang, G.
Xue, C.
Cheng, B.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2012
Source: Wang, L.,Su, S.,Wang, W.,Gong, X.,Yang, Y.,Guo, P.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 44-45. ScholarBank@NUS Repository. https://doi.org/10.1109/ISTDM.2012.6222449
Abstract: In this work, we report high mobility Ge 0.958Sn 0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge 0.958Sn 0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/Vs and a subthreshold swing S of 220 mV/decade. © 2012 IEEE.
Source Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83287
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222449
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