(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G.
Wang, L.
Su, S.
Wang, W.
Gong, X.
Yang, Y.
Guo, P.
Zhang, G.
Xue, C.
Cheng, B.
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Abstract
In this work, we report high mobility Ge 0.958Sn 0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge 0.958Sn 0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/Vs and a subthreshold swing S of 220 mV/decade. © 2012 IEEE.
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Source Title
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
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Date
2012
DOI
10.1109/ISTDM.2012.6222449
Type
Conference Paper