Please use this identifier to cite or link to this item:
|Title:||Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs||Authors:||Wang, L.
|Issue Date:||2012||Citation:||Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C. (2012). Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs. Electrochemical and Solid-State Letters 15 (6) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014206esl||Abstract:||We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide Ni(GeSn)Pt x(GeSn) y contacts are formed by reacting Ni-Pt alloy with Ge 0.947Sn 0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide Ni(GeSn) contacts, the Pt-incorporated contacts, i.e. Ni(GeSn)Pt x(GeSn) y, exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs. © 2012 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83198||ISSN:||10990062||DOI:||10.1149/2.014206esl|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 20, 2019
WEB OF SCIENCETM
checked on May 13, 2019
checked on May 24, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.