Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Publications

Results 61-80 of 141 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
61Jul-2003Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etchingChen, J. ; Tan, K.M.; Wu, N.; Yoo, W.J. ; Chan, D.S.H. 
6224-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
63Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
64Jun-2008Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation techniqueJiang, Y.; Singh, N.; Liow, T.Y.; Loh, W.Y.; Balakumar, S.; Hoe, K.M.; Tung, C.H.; Bliznetsov, V.; Rustagi, S.C.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
652000Global optimization for digital MOS circuits performanceChen, H.M.; Samudra, G.S. ; Chan, D.S.H. ; Ibrahim, Y. 
6Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
7Jan-2010High-performance MIM capacitors using HfLaO-based dielectricsZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J.
8Mar-2000Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structureYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.-B.; Jang, S.-A.; Yeo, I.-S.
9Oct-1996Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stressesLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
10Nov-1996Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gateLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
11Aug-1997Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
12Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
1320-Aug-2008Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layerTong, S.W. ; Zhang, C.F. ; Jiang, C.Y.; Liu, G. ; Ling, Q.D. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
14Mar-1994Investigation of capacitive coupling voltage contrast using a specimen charging modelSim, K. ; Chan, D. ; Phang, J. 
15Dec-1993Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscopePey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Balk, L.J.; Jakubowicz, A.; Bresse, J.F.; Myhajlenko, S.
16Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
172-Sep-1999Investigation of light emitting diodes using nuclear microprobesYang, C. ; Bettiol, A.; Jamieson, D.; Hua, X.; Phang, J.C.H. ; Chan, D.S.H. ; Watt, F. ; Osipowicz, T. 
18Apr-1994Investigation of some aspects of the liquid crystal optical voltage contrast technique for integrated circuit physical analysisChim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. 
19Sep-1998Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurementsChan, D.S.H. ; Leang, S.E.; Chim, W.K. 
202006Investigation of wet etching properties and annealing effects of Hf-based high-k materialsChen, J. ; Jong Yoo, W. ; Chan, D.S.H.