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|Title:||Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation||Authors:||Wu, N.
|Keywords:||Chemical vapor deposited (CVD)
|Issue Date:||Jun-2006||Citation:||Wu, N., Zhang, Q., Chan, D.S.H., Balasubramanian, N., Zhu, C. (2006-06). Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation. IEEE Electron Device Letters 27 (6) : 479-481. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.874209||Abstract:||A gate-first self-aligned Ge n-channel MOSFET (nMOSFET) with chemical vapor deposited (CVD) high-κ gate dielectric HfO2 was demonstrated. By tuning the thickness of the ultrathin silicon-passivation layer on top of the germanium, it is found that increasing the silicon thickness helps to reduce the hysteresis, fixed charge in the gate dielectric, and interface trap density at the oxide/ semiconductor interface. About 61% improvement in peak electron mobility of the Ge nMOSFET with a thick silicon-passivation layer over the CVD HfO2/Si system was achieved. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82400||ISSN:||07413106||DOI:||10.1109/LED.2006.874209|
|Appears in Collections:||Staff Publications|
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