Please use this identifier to cite or link to this item:
|Title:||Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses||Authors:||Lou, C.L.
|Issue Date:||Oct-1996||Citation:||Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005||Abstract:||Under maximum substrate current (lsub.max) stress (i.e. Vg ≈ Vd/2), the hot-carrier induced degradation of tungsten polycide gate (WSix) n-MOSFETs in the linear drain current and maximum linear transconductance is lower, and the shift in the threshold voltage is higher than that of polysilicon gate (PolySi) n-MOSFETs. However, under maximum gate current (Ig,max) stress (i.e. Vg = Vd), the WSix n-MOSFETs showed higher hot-carrier induced degradation than the PolySi devices. In contrast, WSix p-MOSFETs showed higher degradation compared with the PolySi p-MOSFETs under both lg,max (i.e. Vg < Vd/2) and ISUb,max (i.e. Vg ≈ Vd/2) stresses. An explanation, substantiated by charge-pumping measurements, is proposed to explain the phenomena observed. The hot-carrier lifetime of WSix p-MOSFETs is found to limit the operation of WSix CMOS circuits.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/80545||ISSN:||02681242||DOI:||10.1088/0268-1242/11/10/005|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 19, 2020
WEB OF SCIENCETM
checked on Oct 12, 2020
checked on Oct 23, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.