Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0268-1242/11/10/005
Title: | Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses | Authors: | Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y. |
Issue Date: | Oct-1996 | Citation: | Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005 | Abstract: | Under maximum substrate current (lsub.max) stress (i.e. Vg ≈ Vd/2), the hot-carrier induced degradation of tungsten polycide gate (WSix) n-MOSFETs in the linear drain current and maximum linear transconductance is lower, and the shift in the threshold voltage is higher than that of polysilicon gate (PolySi) n-MOSFETs. However, under maximum gate current (Ig,max) stress (i.e. Vg = Vd), the WSix n-MOSFETs showed higher hot-carrier induced degradation than the PolySi devices. In contrast, WSix p-MOSFETs showed higher degradation compared with the PolySi p-MOSFETs under both lg,max (i.e. Vg < Vd/2) and ISUb,max (i.e. Vg ≈ Vd/2) stresses. An explanation, substantiated by charge-pumping measurements, is proposed to explain the phenomena observed. The hot-carrier lifetime of WSix p-MOSFETs is found to limit the operation of WSix CMOS circuits. | Source Title: | Semiconductor Science and Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/80545 | ISSN: | 02681242 | DOI: | 10.1088/0268-1242/11/10/005 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.