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|Title:||Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements||Authors:||Chan, D.S.H.
|Issue Date:||Sep-1998||Citation:||Chan, D.S.H., Leang, S.E., Chim, W.K. (1998-09). Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements. Semiconductor Science and Technology 13 (9) : 976-980. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/13/9/003||Abstract:||The roles of hot electrons and hot holes in the generation of interface states in MOSFETs have been a controversial issue, due to the different interpretations of experimental data. In this article, a new physics-based charge-extraction algorithm, based on charge-pumping measurements, is used to investigate the roles of electrons and holes in the generation of interface states in submicrometre p-channel and n-channel MOSFETs. Our results show that while hot holes play an important role in the creation of interface states in submicrometre nMOSFETs, hot electrons are the main contributors to the interface-state generation in submicrometre buried-channel pMOSFETs. Therefore different analysis is required when characterizing the hot-carrier behaviour of pMOSFETs and nMOSFETs.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/80638||ISSN:||02681242||DOI:||10.1088/0268-1242/13/9/003|
|Appears in Collections:||Staff Publications|
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