Please use this identifier to cite or link to this item:
|Title:||Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate||Authors:||Lou, C.L.
|Issue Date:||Nov-1996||Citation:||Lou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1996-11). Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate. Microelectronics Reliability 36 (11-12 SPEC. ISS.) : 1663-1666. ScholarBank@NUS Repository.||Abstract:||Under maximum substrate current (Isub,max) stress, tungsten-polycide gate (WSix) n-MOSFETs are more resistant to hot-carrier degradation than polysilicon gate (PolySi) devices. However, under maximum gate current (Ig,max) stress, WSix n-MOSFETs degrade more severely. WSix p-MOSFETs degrade more than the PolySi p-MOSFETs under both the Isub,max and Ig,max stress. An explanation substantiated by the charge-pumping measurements is proposed. The hot-carrier lifetimes of WSix n-MOSFETs are found to be higher than that of the WSix p-MOSFETs. Copyright © 1996 Elsevier Science Ltd.||Source Title:||Microelectronics Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/80546||ISSN:||00262714|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.