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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Results 61-80 of 144 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
612007GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxyOh, H.J. ; Choi, K.J.; Loh, W.Y. ; Htoo, T. ; Chua, S.J. ; Cho, B.J. 
2Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
32003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
42005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
52003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
62007High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology nodeSuthram, S.; Majhi, P.; Sun, G.; Kalra, P.; Harris, H.R.; Choi, K.J.; Heh, D.; Oh, J.; Kelly, D.; Choi, R.; Cho, B.J. ; Hussain, M.M.; Smith, C.; Banerjee, S.; Tsai, W.; Thompson, S.E.; Tseng, H.H.; Jammy, R.
72007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.
82004High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Ng, T.H.; Cho, B.J. 
92004HiGH-kappa; MIM capacitors with atomic-layer-deposited HfO 2-Al2O3 laminated and sandwiched dielectrics for analog circuit applicationsDing, S.-J. ; Zhu, C. ; Li, M.-F. ; Cho, B.J. ; Kwong, D.-L.
10Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
11Mar-2000Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structureYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.-B.; Jang, S.-A.; Yeo, I.-S.
122002Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structureChim, W.K. ; Cho, B.J. ; Yue, J.M.P.
13Jun-2002Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETsLek, C.M.; Cho, B.J. ; Ang, C.H.; Tan, S.S.; Loh, W.Y. ; Zhen, J.Z.; Lap, C.
142007Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAsDalapati, G.K.; Tong, Y.; Loh, W.Y.; Mun, H.K.; Cho, B.J. 
15Nov-1999Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrityCho, B.J. ; Ko, L.H.; Nga, Y.A.; Chan, L.H.
162007Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devicesZang, H.; Loh, W.Y. ; Oh, H.J. ; Choi, K.J.; Nguyen, H.S.; Lo, G.Q.; Cho, B.J. 
17Nov-2003Improvement of Electrical Properties of MOCVD HfO2 by Multistep DepositionYeo, C.C.; Cho, B.J. ; Joo, M.S. ; Whoang, S.J.; Kwong, D.L.; Bera, L.K.; Mathew, S.; Balasubramanian, N.
18Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
19Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
202007Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniquesOh, H.J. ; Choi, K.J.; Loh, W.Y.; Htoo, T. ; Chua, S.J. ; Cho, B.J.