Please use this identifier to cite or link to this item:
|Title:||Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices||Authors:||Zang, H.
|Issue Date:||2007||Citation:||Zang, H.,Loh, W.Y.,Oh, H.J.,Choi, K.J.,Nguyen, H.S.,Lo, G.Q.,Cho, B.J. (2007). Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices. ECS Transactions 6 (1) : 105-110. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727393||Abstract:||We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C 0.01. It is also found that the Si/Si1-xGe x/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83827||ISBN:||9781566775502||ISSN:||19385862||DOI:||10.1149/1.2727393|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 7, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.